Publications
81. Jung I-Y, Song S, Choi M, Yu H and Kim CS. Evolution of mechanically formed bow due to surface waviness and residual stress difference on sapphire (0001) substrate. J Mater Process Technol. 2019;269:102-108. doi:10.1016/J.JMATPROTEC.2019.02.003
80. Kim CS, Jeon HG, Jung Y, Choi M, Byungsung O and Kim KH. Observation of surface contamination layer by X-ray reflectometry (XRR) analyses. Surf Interface Anal. 2017. doi:10.1002/sia.6188
79. Lee SM, Kim N-W, Jung IY, Kim CS and Yu H. Structural and vibrational properties of Al
78. Song S, Kim D, Jang HM, Yeo BC, Han SS, Kim CS and Scott JF. β-CuGaO2 as a Strong Candidate Material for Efficient Ferroelectric Photovoltaics. Chem Mater. 2017. doi:10.1021/acs.chemmater.7b03141
77. Park SJ, Lee JP, Jang JS, Rhu H, Yu H, You BY, Kim CS, Kim KJ, Cho YJ, Baik S and Lee W. In situ control of oxygen vacancies in TiO 2 by atomic layer deposition for resistive switching devices. Nanotechnology. 2013. doi:10.1088/0957-4484/24/29/295202
76. Suh H, Nam KH, Jung H, Kim CY, Kim JG, Kim CS, Myung NV and Hong K. Tapered BiTe nanowires synthesis by galvanic displacement reaction of compositionally modulated NiFe nanowires. Electrochim Acta. 2013. doi:10.1016/j.electacta.2012.12.011
75. Motzkus C, Macé T, Gaie-Levrel F, Ducourtieux S, [et al., including Kim CS]. Size characterization of airborne SiO 2 nanoparticles with on-line and off-line measurement techniques: An interlaboratory comparison study. J Nanoparticle Res. 2013. doi:10.1007/s11051-013-1919-4
74. Kim CS, Bin SM, Jeon HG, O B and Choi YD. Accurate determination of surface orientation of single-crystal wafers using high-resolution X-ray rocking curve measurements. J Appl Crystallogr. 2013. doi:10.1107/S0021889813020669
73. Yun J-G, Lee Y-M, Lee W-J, Kim C-S and Yoon S-G. Selective growth of pure magnetite thin films and/or nanowires grown in situ at a low temperature by pulsed laser deposition. J Mater Chem C. 2013;1(10):1977. doi:10.1039/c2tc00672c
72. Kang YS, Kim CY, Cho M-H, An C-H, Kim H, Seo JH, Kim CS, Lee TG and Ko D-H. Interfacial Reactions between HfO2 Films Prepared by Atomic-Layer-Deposition and an InP Substrate Using Postnitridation with NH3 Vapor. Electrochem Solid-State Lett. 2012. doi:10.1149/2.008204esl
71. Ma JW, Lee WJ, Cho MH, Lee KM, Sohn HC, Kim CS and Cho HJ. Interfacial reaction induced phase separation in LaxHf yO films. J Appl Phys. 2011. doi:10.1063/1.3598084
70. Duong TT, Kim DJ, Kim CS and Yoon SG. Ultraviolet response and photoelectrochemical properties of a rutile and anatase mixture grown onto single-wall carbon nanotubes at a low temperature using nano-cluster deposition. J Mater Chem. 2011. doi:10.1039/c1jm11921d
69. Kim YH, Kim CS, Noh YK, Kim MD and Oh JE. Substrate temperature dependence of the phase transition behavior of AlN layers grown on Si(111) substrate by metalorganic chemical vapor deposition. J Cryst Growth. 2011. doi:10.1016/j.jcrysgro.2011.08.033
68. Kim YH, Yun WS, Ruh H, Kim CS, Kim JW, Shin YH, Kim MD and Oh JE. Microstructural properties and initial growth behavior of InN nanobats grown on a Si(1 1 1) substrate. J Cryst Growth. 2010. doi:10.1016/j.jcrysgro.2009.12.026
67. Lee KS, Kwack HS, Hwang JS, Roh TM, Cho YH, Lee JH, Kim YC and Kim CS. Spatial correlation between optical properties and defect formation in GaN thin films laterally overgrown on cone-shaped patterned sapphire substrates. J Appl Phys. 2010. doi:10.1063/1.3388014
66. Ahn HB, Kim YH, Kim MD, Kim CS and Lee JY. Formation and microstructural characterization of In2O 3 sheath layer on InN nanostructures. Chem Phys Lett. 2010. doi:10.1016/j.cplett.2010.09.023
65. Kang YS, Kim CY, Cho MH, Chung KB, An CH, Kim H, Lee HJ, Kim CS and Lee TG. Thickness dependence on crystalline structure and interfacial reactions in HfO2 films on InP (001) grown by atomic layer deposition. Appl Phys Lett. 2010. doi:10.1063/1.3506695
64. Koo TK, Byungsung OB, Yu Y-M, Kim D-J, Kim C-S, Choi YD, Lee JW, Yoon M-Y, Yu PY and Kang TW. New cubic Cd
63. Kim YH, Park HJ, Kim K, Kim CS, Yun WS, Lee JW and Kim MD. Strain distribution and interface modulation of highly lattice-mismatched InN/GaN heterostructure nanowires. Appl Phys Lett. 2009;95(3):033112. doi:10.1063/1.3184541
62. Go S, Jeong K, Lee K, Kim A, Ruh H, Kim CS and Lee J. Effects of Si interlayer on resistance switching of Pt/Si/TiO[sub 2]/Pt structures. J Vac Sci Technol B Microelectron Nanom Struct. 2009;27(5):2175. doi:10.1116/1.3207744
61. Kim H-W, Choi S, Hong S, Jung HK, Lee G-D, Yoon E and Kim CS. Effect of C incorporation on relaxation of SiGe/Si. Appl Phys Lett. 2008;93(22):221902. doi:10.1063/1.3040308
60. Ahn J-K, Cuong ND, Yoon S-G and Kim C-S. Structural and electrical properties of Bi[sub 1.5]Mg[sub 1.0]Nb[sub 1.5]O[sub 7] thin films deposited on Pt/TiO[sub 2]/SiO[sub 2]/Si substrates by rf-magnetron sputtering. J Vac Sci Technol B Microelectron Nanom Struct. 2008;26(4):1277. doi:10.1116/1.2932090
59. Yu Y-M, Kim D-J, Choi YD and Kim C-S. Growth and characterization of rocksalt MnS/GaAs epilayers by hot-wall epitaxy. Appl Surf Sci. 2007;253(7):3521-3524. doi:10.1016/J.APSUSC.2006.07.058
58. Kim CS, Koo TK and Choi YD. Observation of an Interlayer in a Nano-Scale SiO<sub>2</sub> Layer on Si Substrate by X-Ray Reflectivity (XRR) Analysis. Solid State Phenom. 2007;124-126:1689-1692. doi:10.4028/www.scientific.net/SSP.124-126.1689
57. Cuong ND, Phuong NM, Kim D-J, Kang B-D, Kim C-S and Yoon S-G. Effect of annealing temperature on structural and electrical properties of tantalum nitride thin film resistors deposited on SiO[sub 2]∕Si substrates by dc sputtering technique. J Vac Sci Technol B Microelectron Nanom Struct. 2006;24(2):682. doi:10.1116/1.2178375
56. Phuong NM, Kim D-J, Kang B-D, Kim CS and Yoon S-G. Effect of Chromium Concentration on the Electrical Properties of NiCr Thin Films Resistor Deposited at Room Temperature by Magnetron Cosputtering Technique. J Electrochem Soc. 2006;153(1):G27. doi:10.1149/1.2129332
55. Gao CX, Yu FC, Jeong SY, Choi AR, Parchinskiy P, Kim DJ, Kim HJ, Ihm YE, Kim CG and Kim CS. The magnetic properties of Be-codoped GaMnN grown via molecular beam epitaxy. J Magn Magn Mater. 2006;304(1):e158-e160. doi:10.1016/J.JMMM.2006.02.040
54. Hong S, Kim H-W, Bae DK, Song SC, Lee G-D, Yoon E, Kim CS, Foo YL and Greene JE. Formation of flat, relaxed Si1−xGex alloys on Si(001) without buffer layers. Appl Phys Lett. 2006;88(12):122103. doi:10.1063/1.2188043
53. Cuong ND, Kim D-J, Kang B-D, Kim CS, Yu K-M and Yoon S-G. Characterization of Tantalum Nitride Thin Films Deposited on SiO[sub 2]∕Si Substrates Using dc Magnetron Sputtering for Thin Film Resistors. J Electrochem Soc. 2006;153(2):G164. doi:10.1149/1.2146861
52. Park YS, Park CM, Hwang BR, Im , Kang TW, Kim C and Noh SK. Effects of different potential barriers on the structural and optical properties of GaN∕AlxGa1−xN∕GaN coupled multiquantum wells. J Appl Phys. 2006;100(2):026101. doi:10.1063/1.2213182
51. Kim K, Kim CS and Lee JY. The In compositional gradation effect on photoluminescence in InGaN/GaN multi-quantum-well structures. J Phys Condens Matter. 2006;18(11):3127-3140. doi:10.1088/0953-8984/18/11/018
50. Gao CX, Yu FC, Choi AR, Kim DJ, Kim CG, Kim CS, Kim HJ and Ihm YE. A comparative study on Be and Mg doping in GaN films grown using a single GaN precursor via molecular beam epitaxy. J Cryst Growth. 2006;291(1):60-65. doi:10.1016/J.JCRYSGRO.2006.03.007
49. Cho YM, Yu SS, Ihm YE, Lee SW, Kim D, Kim H, Sohn JM, Kim BG, Kang YH, Oh S, Kim CS and Lee HJ. Neutron irradiation effects on polycrystalline Ge1−xMnx thin films grown by MBE. Curr Appl Phys. 2006;6(3):482-485. doi:10.1016/J.CAP.2005.11.074
48. Yu SS, Anh TTL, Ihm YE, Kim D, Kim H, Hong SK, Oh S, Kim CS, Lee HJ and Woo BC. Magneto-transport properties of amorphous Ge1−xMnx thin films. Curr Appl Phys. 2006;6(3):545-548. doi:10.1016/J.CAP.2005.11.057
47. Yu SS, Cho YM, Ihm YE, Kim D, Kim H, Hong SK, Oh S, Woo BC and Kim CS. Magnetic and electrical properties of MBE-grown (Ge1−xSix)1−yMny thin films. Curr Appl Phys. 2006;6(3):478-481. doi:10.1016/J.CAP.2005.11.044
46. Kwon D, Ihm YE, Lee SW, Kim D, Kim H, Sohn JM, Kang YH, Kim BG, Kim CS, Ryu H and Oh SJ. Neutron irradiation effect of poly-Si1−xMnx semiconductors grown by MBE. Curr Appl Phys. 2006;6(3):432-435. doi:10.1016/J.CAP.2005.11.073
45. Kim D-J, Yu Y-M, Choi YD, Lee J-W and Kim C-S. Determination of critical thickness of ZnS∕GaP epilayers using spectroscopic ellipsometry. Appl Phys Lett. 2006;88(5):051902. doi:10.1063/1.2168041
44. Lee J, Yang HJ, Lee JH, Kim JY, Nam WJ, Shin HJ, Ko YK, Lee JG, Lee EG and Kim CS. Highly Conformal Deposition of Pure Co Films by MOCVD Using Co[sub 2](CO)[sub 8] as a Precursor. J Electrochem Soc. 2006;153(6):G539. doi:10.1149/1.2189950
43. Yu SS, Han KH, Ihm YE, Kim D, Kim H, Kim CS, Ryu H and Oh S. Magnetic and electrical properties of amorphous Ge1−xCrx thin films grown by low temperature vapor deposition. J Magn Magn Mater. 2006;304(1):e170-e172. doi:10.1016/J.JMMM.2006.02.043
42. Cuong ND, Kim D-J, Kang B-D, Kim C-S and Yoon S-G. Effect of film thickness on the electrical properties of tantalum nitride thin films deposited on SiO[sub 2]∕Si substrates for Π-type attenuator applications. J Vac Sci Technol B Microelectron Nanom Struct. 2006;24(3):1398. doi:10.1116/1.2201456
40. Ahn J-K, Yoon S-G and Kim CS. Effect of Li[sub 0.5]La[sub 0.5]TiO[sub 3] solid electrolyte films on electrochemical properties of LiCoO[sub 2] thin film cathodes with different rapid-thermal annealing conditions. J Vac Sci Technol B Microelectron Nanom Struct. 2005;23(5):2089. doi:10.1116/1.2052711
41. Lee W-S, Ahn K-C, Yoon S-G and Kim CS. Effect of film thickness on the ferroelectric properties of Pb(Zr[sub 0.2]Ti[sub 0.8])O[sub 3] thin films for nano-data storage applications. J Vac Sci Technol B Microelectron Nanom Struct. 2005;23(5):1901. doi:10.1116/1.2008270
39. Eom SH, Yu Y-M, Choi YD and Kim C-S. Optical characterization of ZnO whiskers grown without catalyst by hot wall epitaxy method. J Cryst Growth. 2005;284(1-2):166-171. doi:10.1016/J.JCRYSGRO.2005.07.006
38. Park YS, Park CM, Lee SJ, Im H, Kang TW, Oh J-E, Kim CS and Noh SK. Structural and optical properties of GaN/AlGaN multiquantum wells with an AlGaN insertion monolayer in the GaN well. Semicond Sci Technol. 2005;20(8):775-778. doi:10.1088/0268-1242/20/8/022
37. Jeoung SC, Kim HS, Park M-I, Lee J, Kim CS and Park C-O. Preparation of Room-Temperature Photoluminescent Nanoparticles by Ultrafast Laser Processing of Single-Crystalline Ge. Jpn J Appl Phys. 2005;44(7A):5278-5281. doi:10.1143/JJAP.44.5278
36. Park M-I, Kim CS and Park C-O, Jeoung SC. XRD studies on the femtosecond laser ablated single-crystal germanium in air. Opt Lasers Eng. 2005;43(12):1322-1329. doi:10.1016/J.OPTLASENG.2004.12.010
35. Kim KH, Lee KJ, Kang HS, Yu FC, Kim JA, Kim DJ, Baik KH, Yoo SH, Kim CG, Kim YS, Kim CS, Kim HJ and Ihm YE. Molecular beam epitaxial growth of GaN and GaMnN using a single precursor. Phys status solidi. 2004;241(7):1458-1461. doi:10.1002/pssb.200304556
34. Cho YM, Yu SS, Ihm YE, Kim D, Kim H, Baek JS, Kim CS and Lee BT. Annealing effect on magnetic and electronic properties of polycrystalline Ge1−xMnx semiconductors grown by MBE. J Magn Magn Mater. 2004;282:385-388. doi:10.1016/J.JMMM.2004.04.089
33. Kim HK, Kwon D, Kim JH, Ihm YE, Kim D, Kim H, Baek JS, Kim CS and Choo WK. Magnetic phases in polycrystalline Si1−xMnx semiconductors grown by MBE. J Magn Magn Mater. 2004;282:244-247. doi:10.1016/J.JMMM.2004.04.055
32. Kwon D, Kim HK, Kim JH, Ihm YE, Kim D, Kim H, Baek JS, Kim CS and Choo WK. Heat treatment effect on magnetic properties of polycrystalline Si1−xMnx semiconductors grown by MBE. J Magn Magn Mater. 2004;282:240-243. doi:10.1016/J.JMMM.2004.04.054
31. Ihm YE, Yu SS, Kim D, Kim H, Lee KH, Kim CS and Lee BT. Magneto-electronic properties of Ge1−xMnx thin films grown by MBE. J Magn Magn Mater. 2004;272-276:E1539-E1540. doi:10.1016/J.JMMM.2003.12.800
30. Yu Y-M, Lee K-S, O B, Yu PY, Kim C-S, Choi YD and Yun H-J. Growth and characterization of cubic CdS epilayers on GaAs substrates. J Vac Sci Technol A Vacuum, Surfaces, Film. 2004;22(2):324-327. doi:10.1116/1.1647597
29. Jeong JK, Choi J-H, Hwang CS, Kim HJ, Lee J-H, Lee J-H and Kim C-S. Influence of Al doping on lattice strain and electrical properties of epitaxial GaN films grown by metalorganic chemical vapor deposition on Al2O3 substrate. Appl Phys Lett. 2004;84(14):2575-2577. doi:10.1063/1.1702135
28. Kim KH, Lee KJ, Kim DJ, Kim CS, Lee HC, Kim CG, Yoo SH, Kim HJ and Ihm YE. Improvement of magnetic property of GaMnN by codoping of Mg. J Appl Phys. 2003;93(10):6793-6795. doi:10.1063/1.1556114
27. Kim KH, Lee KJ, Kim DJ, Kim HJ, Ihm YE, Kim CG, Yoo SH and Kim CS. Enhanced carrier-mediated ferromagnetism in GaMnN by codoping of Mg. Appl Phys Lett. 2003;82(26):4755-4757. doi:10.1063/1.1586484
26. Kim S, Lee K, Park K and Kim C-S. Effects of barrier growth temperature on the properties of InGaN/GaN multi-quantum wells. J Cryst Growth. 2003;247(1-2):62-68. doi:10.1016/S0022-0248(02)01943-7
25. Kim S, Lee K, Lee H, Park K, Kim C-S, Son S-J and Yi K-W. The influence of ammonia pre-heating to InGaN films grown by TPIS-MOCVD. J Cryst Growth. 2003;247(1-2):55-61. doi:10.1016/S0022-0248(02)01942-5
24. Kim KH, Lee KJ, Kim DJ, Kim HJ, Ihm YE, Djayaprawira D, Takahashi M, Kim CS, Kim CG and Yoo SH. Magnetotransport of p-type GaMnN assisted by highly conductive precipitates. Appl Phys Lett. 2003;82(11):1775-1777. doi:10.1063/1.1561580
23. Park S-E, Lim S-M, Lee C-R, Kim CS and O B. Influence of SiN buffer layer in GaN epilayers. J Cryst Growth. 2003;249(3-4):487-491. doi:10.1016/S0022-0248(02)02357-6
22. Kim K-H, Park J-H, Kim B-D, Kim C-S, Kim D, Kim H-J and Ihm Y-E. Optimization of GaMnAs growth in low temperature molecular beam epitaxy. Met Mater Int. 2002;8(2):177-181. doi:10.1007/BF03027015
21. Kim S, Seo J, Lee K, Lee H, Park K, Kim Y and Kim C-S. Growth of AlGaN epilayers related gas-phase reactions using TPIS-MOCVD. J Cryst Growth. 2002;245(3-4):247-253. doi:10.1016/S0022-0248(02)01732-3
20. Cha T, Yoon S, Lee D, Ryu H, Lee H, Kim CS and Jeon H. Study on the transition temperature and phase formation sequence in TiZr silicides on Si(100). J Vac Sci Technol A Vacuum, Surfaces, Film. 1999;17(2):332-337. doi:10.1116/1.581592
19. Lee C-R, Leem J-Y, Noh S-K, Park S-E, Lee J-I, Kim C-S, Son S-J and Leem K-Y. Characteristics of Mg-doped GaN epilayers grown with the variation of Mg incorporation. J Cryst Growth. 1998;193(3):300-304. doi:10.1016/S0022-0248(98)00436-9
18. Nam S, O B, Lee K-S, Choi YD and Kim C-S. Strain effect and photoluminescence of ZnS epilayers grown on GaP(100) substrates by hot-wall epitaxy. J Appl Phys. 1998;84(2):1047-1051. doi:10.1063/1.368102
17. Choi C-Y, Lee J-H, Cho S-H, Lee D-K and Kim C-S. Evaluation of mechanical damage by high resolution x-ray diffraction and minority carrier recombination lifetime in silicon wafer. J Appl Phys. 1998;84(1):168-173. doi:10.1063/1.368073
16. Leem JY, Son JS, Lee CR, Kim CS, Cho YK, Lee Hwack J, Noh SK and Bae IH. Annealing effects in ZnSe/GaAs heterostructure grown by molecular beam epitaxy. Appl Phys Lett. 1997;71(22):3257-3259. doi:10.1063/1.120307
15. Leem JY, Son JS, Kim CS, Cho YK, Noh SK, Park HS, Kim MD and Kim TI. ZnSSe epilayers with extremely low defect density by the growth-temperature optimization. Semicond Sci Technol. 1997;12(6):767-770. doi:10.1088/0268-1242/12/6/002
14. Kim D-W, Kwak JS, Park H-S, Kim HN, Baik HK, Lee S-M, Kim C-S and Noh S-K. Interfacial reaction and electrical property of Ge/Ni/ZnSe for blue laser diode. J Electron Mater. 1997;26(2):83-89. doi:10.1007/s11664-997-0093-9
13. Leem JY, Lee CR, Kim CS, Cho YK, Noh SK, Son JS, Lee DK and Bae IH. Molecular beam epitaxial growth and properties of high-quality ZnSxSe1 − x on GaAs(0 0 1) substrate. J Cryst Growth. 1997;180(1):40-46. doi:10.1016/S0022-0248(97)00192-9
12. Kim CS and Galligan JM. Dislocation velocities at low temperatures. Acta Mater. 1996;44(2):775-779. doi:10.1016/1359-6454(95)00221-9
11. Kwak JS, Kim HN, Baik HK, Shin DW, Park CG, Kim CS and Noh SK. Interfacial reactions of Si/Co films on GaAs. J Mater Sci Lett. 1995;14(6):408-410. doi:10.1007/bf00274555
10. Lee H-G, Kook I-H, Hong G-W, Lee K-W, Kim Y-I, Kim C-S, Kim J-J and Song M-Y. Preparation of a melt-processed La123 bulk superconductor with finely dispersed Y211 particle. Phys C Supercond. 1995;246(1-2):73-77. doi:10.1016/0921-4534(95)00136-0
9. Hwang C, Ryu M, Kim K, Lee S and Kim CS. Solid phase crystallization of amorphous Si 1− x Ge x films deposited on SiO 2 by molecular beam epitaxy. J Appl Phys. 1995;77(7):3042-3047. doi:10.1063/1.358654
8. Kang JM, Son CS, Kim M, Kim Y, Min S and Kim CS. Origin of crystallographic tilt in InGaAs/GaAs(001) heterostructure. Appl Phys Lett. 1995;67(5):641-643. doi:10.1063/1.115188
7. Baek J, Lee B, Yoon M, Lee E and Kim CS. Lattice relaxation in In x Al 1− x As/GaAs heterostructure grown on exact oriented and misoriented GaAs substrates. Appl Phys Lett. 1995;66(26):3657-3659. doi:10.1063/1.114131
6. Kwak JS, Baik HK, Shin DW, Park CG, Kim CS, Noh SK and Kim SI. The interactions between Si/Co films and GaAs(001) substrates. J Electron Mater. 1994;23(12):1335-1341. doi:10.1007/BF02649899
5. Lee H, Kim CS, Han C and Kim C. Direct growing of lightly doped epitaxial silicon without misfit dislocation on heavily boron‐doped silicon layer. Appl Phys Lett. 1994;65(17):2139-2141. doi:10.1063/1.112769
4. Kim CS and Galligan JM. Viscosity limited dislocation motion. Scr Metall Mater. 1992;26(11):1769-1773. doi:10.1016/0956-716X(92)90550-X
3. Kim CS and Galligan J. An experimental demonstration of the influence of viscosity on thermal activation — Strain dependence. Scr Metall Mater. 1992;26(5):837-839. doi:10.1016/0956-716X(92)90448-N
2. Kim CS and Galligan JM. The influence of viscosity on the escape rate from metastability—creep at low temperature. Acta Metall Mater. 1992;40(6):1187-1194. doi:10.1016/0956-7151(92)90417-D
1. Kim CS and Galligan JM. A method of distinguishing between viscosity related processes and thermally activated processes. Scr Metall Mater. 1991;25(10):2319-2322. doi:10.1016/0956-716X(91)90022-S